An electrochemical flow microreactor for a greener synthesis of gold nanoparticles

Gold nanoparticles (AuNPs) possess unique electronic, photonic, and chemical properties of invaluable interest in a variety of medical and technological applications. They are typically produced by controlled chemical precipitation from a salt solution to achieve the precise size control critical for most applications. Continuous flow microreactors, which efficiently mix the salt solution and the reducing agent, are known to offer improved size control. However, even in these reactors, the smallest AuNPs can only be formed using powerful reducing agents that are harmful to human health or the environment. We propose to minimize their impact and to develop a more resource-efficient process by inserting an electrochemical cell into the reactor to form the reducing agent in-situ in the adjusted amount necessary to produce the desired AuNPs.
Your goal will be to test and adapt continuous-flow electrochemical cells for the synthesis of AuNPs, exploring various electrochemical reactions and cell designs. You will also explore the use of several capping agents of biological interest. A careful examination of AuNPs characteristics (size, interfacial and optical properties, etc.) will guide you in this research.

Growth of 2D Ferromagnetic Chalcogenide Materials for Spintronics

Chalcogenide materials, particularly Ge-Sb-Te (GST) alloys, are essential for phase-change memory (PCMs).
Although high-performance, these memories consume a great deal of energy, which
is driving the search for alternative solutions. GST alloys offer unique opportunities in the field of spin-orbitronics as spin-charge conversion materials or as sources of spin-polarized current. Two-dimensional ferromagnetic alloys such as Fe-Ge-Te or Ge-Mn-Te offer promising avenues as sources of spin current for new types of more efficient memory devices. For efficient spin injection, we are seeking a material that not only exhibits a high Curie temperature (TC) and significant spin polarization, but is also fully compatible with existing silicon-based CMOS technology.
The aim of this thesis is to develop and master, on an industrial scale on 300 mm Si substrates, the van der Waals epitaxial growth of 2D ferromagnetic films based on Fe-Ge (Ga)Te2 (n=3, 5) or Ge_(1-x)Mn_xTe, for example to integrate them in situ with spin-charge conversion chalcogenide layers such as ferroelectric layers (a-GeTe(111)) or topological insulators (Bi_(2-x)Sb2Te3).

Dies to wafer direct bonding: from physical mechanisms to the development of thin stackable dies

Direct dies-to-wafer bonding has become, in recent years, a major development axis in microelectronics and at the heart of many LETI projects, both in silicon photonics and for 3D applications involving hybrid bonding.

Due to their small size, die bonding allows the study of direct bonding edge effects and the implementation of new direct bonding processes that can shed original light on the mechanisms of direct bonding, which are already well studied at LETI. From a more technological perspective, the development of thin stackable chips will also be a very interesting technological key for many applications. This approach is a clever alternative to classical damascene processes to address the challenges related to the planarization of surfaces with low density of high topographies.

Selective deposition of oxides by ALD

For next-generation microelectronics, Area Selective Deposition (ASD)is a promising approach to simplify integration schemes for the most advanced technology nodes. These ASD approaches need to be adapted according to a trio comprising the material to be deposited, the growth surface, and the inhibited surface.
This PhD focuses on the area selective deposition of oxides (such as SiO2, Al2O3, …) on Si or SiO2 and not on silicon nitride (SiN), which is one of the most complex topics in ASD, and aims to evaluate the relevance of this type of process for simplifying the integration and the fabrication of advanced FDSOI transistors.
To develop this selective oxide deposition process, various approaches aiming at making SiN an inhibitor of the Atomic Layer Deposition (ALD) will be explored (plasma treatments, Small Molecular Inhibitors, combination of both, etc.). Dedicated surface characterizations will be carried out in order to better understand the mechanisms of inhibition at the origin of the selective deposition and allowing to achieve high selectivity for oxide thicknesses of 10 nm and above.
This PhD project will take place at CEA-LETI, within the advanced materials deposition department, in collaboration with LMI UMR 5615 CNRS/UCBLyon. The student will have access to the CEA-LETI 300 mm cleanroom fabrication platforms for thin film deposition by PEALD, the CEA nanocharacterization platform and gas-phase surface functionalization at LMI. Surface analyses and thin film characterizations (ellipsometry, XRR, AFM, FTIR, contact angle, SEM, XPS, ToF-SIMS) will be used to determine the best selectivity and understand the physico-chemical mechanisms.

Reducing damage and loading in high aspect ratio III-V etching

The growing demand for III-V semiconductors in high-efficiency photovoltaics, quantum photonics, and advanced imaging technologies requires innovative and cost-effective fabrication methods. This PhD project focuses on developing plasma etching processes for In-based III-V semiconductors to produce high aspect ratio (HAR) structures on large wafers from 100 to 300 mm. The research addresses two key challenges: understanding how etching process windows evolve with material loading and process conditions (physical vs. chemical dominance), and minimizing electrical degradation induced by HAR etching, which is critical for device performance.
These challenges are fundamentally linked to the low volatility of In-based etch byproducts, the need to balance kinetic and thermal energy inputs to enhance etch selectivity, and the management of etch loading effects for large-scale production. The experimental approach will leverage CEA-Leti's state-of-the-art facilities, including the Photonics platform for 2–4-inch wafer processing, which enables masking strategies (hard mask deposition, photolithography) and low-temperature (150°C) etching.
Characterization will involve SEM for etch profile analysis, XPS for surface composition, and TEM-EDX for sidewall quality assessment. Damage evaluation will be performed using near-infrared photoluminescence decay to measure minority carrier lifetime and identify recombination centers. The work aims to develop optimized HAR etching processes (aspect ratios >10, critical dimensions <1 µm) for In-based III-V materials, investigate pulsed plasma techniques to reduce etch-induced damage, and provide insights into defect formation mechanisms to guide process optimization for industrial applications.

Next-Gen Surface Analysis for Ultrathin Functional Materials

Advanced nanoelectronics and quantum devices rely on ultrathin oxides and engineered interfaces whose chemical composition, stoichiometry and thickness must be controlled with sub-nanometer precision. LETI is installing the first 300-mm multi-energy XPS–HAXPES tool with angle-resolved capability, enabling quasi in situ chemical metrology from deposition to characterization.
This PhD will develop quantitative, multi-energy and angle-resolved XPS/HAXPES methodologies for ultrathin oxides and oxynitrides, validate measurement accuracy, and establish robust protocols for quasi in situ transfer of sensitive layers. Applications include advanced CMOS stacks and quantum Josephson junctions, where sub-2 nm AlOx barriers critically determine device performance.
The project directly supports the development of next-generation quantum technologies, advanced photonics and energy-efficient microelectronics by improving the reliability and stability of nanoscale materials. The work will be carried out within a strong multi-partner framework.

Development of 4D-STEM with variable tilts

The development of 4D-STEM (Scanning Transmission Electron Microscopy) has profoundly transformed transmission electron microscopy (TEM) by enabling the simultaneous recording of spatial (2D) and diffraction (2D) information at each probe position. These so-called “4D” datasets make it possible to extract a wide variety of virtual contrasts (bright-field imaging, annular dark-field imaging, ptychography, strain and orientation mapping) with nanometer-scale spatial resolution.
In this context, 4D-STEM with variable beam tilts (4D-STEMiv) is an emerging approach that involves sequentially acquiring electron diffraction patterns for different incident beam tilts. Conceptually similar to precession electron diffraction (PED), this method offers greater flexibility and opens new possibilities: improved signal-to-noise ratio, faster two-dimensional imaging at higher spatial resolution, access to three-dimensional information (orientation, strain, phase), and optimized coupling with spectroscopic analyses (EELS, EDX).
The development of 4D-STEMiv thus represents a major methodological challenge for the structural and chemical characterization of advanced materials, particularly in the fields of nanostructures, two-dimensional materials, and ferroelectric systems.

In situ study of the impact of the electric field on the properties of chalcogenide materials

Chalcogenide materials (PCM, OTS, NL, TE, FESO, etc.) are the basis of the most innovative concepts in microelectronics, from PCM memories to the new neuromorphic and spinorbitronic devices (FESO, SOT-RAM, etc.). Part of their operation relies on out-of-equilibrium physics induced by the electronic excitation resulting from the application of an intense electric field. The aim of this thesis is to measure experimentally on chalcogenide thin films the effects induced by the intense electric field on the atomic structure and electronic properties of the material with femtosecond (fs) time resolution. The 'in-operando' conditions of the devices will be reproduced using a THz fs pulse to generate electric fields of the order of a few MV/cm. The induced changes will then be probed using various in situ diagnostic methods (optical spectroscopy or x-ray diffraction and/or ARPES). The results will be compared with ab initio simulations using a state-of-the-art method developed with the University of Liège. Ultimately, the ability to predict the response of different chalcogenide alloys on time scales fs under extreme field conditions will make it possible to optimise the composition and performance of the materials (e- switch effect, electromigration of species under field conditions, etc.), while providing an understanding of the underlying fundamental mechanisms linking electronic excitation, evolution and the properties of the chalcogenide alloys.

Clean Room Activity Simulation Tool Development

During a previous internship, a tool for simulating batch execution in a clean room was developed. This tool takes into account processing times on equipment, equipment failures, and certain holds related to integration. The batches injected into this simulator come from the actual history of the clean room.
The goal of the PhD is to develop a simulator that can prospectively simulate batch execution based on the POR routes of the main themes present or upcoming in the clean room. Based on the POR routes, the tool should be able to generate development batches for technology bricks (short loops), as well as functional batches including test plates and pilot plates. A nomenclature and enrichment of the routes through metadata will need to be carried out to enable the tool to generate batches realistically, both in terms of process and project scheduling.
Different simulation engines will be compared in terms of performance and accuracy. Classical resolution engines (discrete simulation, event-driven, conjunctive graph-based) as well as innovative approaches (primarily reinforcement learning, but also supervised learning) will be studied.
The development and publication of a methodology for creating simulation instances (testbed) will also be carried out during this PhD work.

Study of Etching Mechanisms in Dielectric Materials: Application to Low Global Warming Potential Gases

Interconnection levels (Back-End Of Line, or BEOL) in microelectronics enable the connection of transistors to achieve the desired device functionalities. The fabrication of these levels relies on lithography and plasma etching processes. Plasma dry etching is a key technique in the manufacturing of microelectronic devices, as it allows the precise definition of structures at the nanometer scale. This process involves several major challenges, including stringent control of etch profiles, critical dimensions of the patterns, and the assurance of selectivity between different materials. Beyond these technical aspects, plasma etching also raises significant environmental concerns. Indeed, the gases used in these processes, such as fluorocarbons, are often greenhouse gases with very high global warming potential (GWP).

The objective is therefore twofold: to reduce the carbon footprint of these processes while maintaining, or even improving, the critical post-etch performance metrics, such as achieving the target critical dimensions, avoiding damage to the etched materials, preventing defect formation, and ensuring the spatial uniformity of these performances