Correlative X-ray and ToF-SIMS tomography Data fusion of 3-D data sets from X-ray and ToF-SIMS tomography

The nanocaracterisation platform of the CEA Grenoble has recently installed 2 state-of-the-art tools for 3-D imaging with 100 nm resolution: X-ray tomography in a SEM and time of flight secondary ion mass spectrometry (ToF-SIMS) assisted by focused ion milling (FIB). X-ray tomography delivers non-invasive 3-D images of the internal morphology of an object whilst ToF-SIMS is able to map the local composition in 3-D. We aim to combine the two techniques to perform quantitative 3-D investigations of objects such as copper pillars for microelectronics or silicon electrodes for Li battery applications.
The proposed research subject is data analysis orientated. Some simulation work may be performed to implement and test existing 3-D data fusion methods with a view to adapting and improving them. The candidate will assist with the experimental measurements and be responsible for treating the data with the chosen protocols. The candidate should be pragmatic, at ease with applied mathematics and have good programming skills. These will be essential in understanding and manipulating the fusion and reconstruction algorithms, from the simplest, to the increasingly advanced (prior information, superiorisation, Bayesian fusion)
The candidate will have completed a PhD in physics and have good computer (Python, Matlab, C) and image treatment skills, or a PhD in mathematics/computational science with an interest in applications. The candiate will need to interface with a multidisciplinary team, and be receptive to new ideas. The candidate will be proficient in both written and spoken English in order to communicate with the team and to disseminate their results in articles or at conferences.

Electrical Characterization of resistive memory devices

The activity of the postdoc will be focused on electrical characterization and physical modeling of devices with integrated bistable oxides (ie NiO, HfO2): mainly he will address both the hardware & methodology to address the non-volatile memory performances (ie write/erase, data retention and endurance), and he will perform measurements on several devices featuring different bistable oxides (ie NiO, HfO2…). Note that particular attention will be devoted to pulsed measurements tailored for “non-polar” or “bipolar” devices. After having collected sufficient ensemble of data on memory performance, he will try to interpret them in the simplest form with possibly semi-analitycal models in order to catch the basics of physics relying behind the electrical data.

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