Lean-Rare Earth Magnetic materials
The energy transition will lead to a very strong growth in the demand for rare earths (RE) over the next decade, especially for the elements (Nd, Pr) and (Dy, Tb). These RE, classified as critical materials, are used almost exclusively to produce NdFeB permanent magnets, and constitute 30% of their mass.
Several recent international studies, aiming to identify new alloys with low RE content and comparable performances to the dense magnetic phase Nd2Fe14B, put hard magnetic compounds of RE-Fe12 type as advantageous substitution solutions, allowing to reduce more that 35% of the amount of RE, while keeping the intrinsic magnetic properties close to those of the Nd2Fe14B composition.
The industrial developments of the RE-Fe12 alloys cannot yet be considered due to the important technological and scientific challenge that remain to be lifted in order to be able to produce dense magnets with resistance to demagnetization sufficient for current applications (coercivity Hc > 800 kA/m).
The aim of the post-doctoral work is to develop Nd-Fe12 based alloys with optimized intrinsic magnetic properties and to master the sintering of the powders in order to obtain dense magnets with coercivity beyond 800 kA/m, to fulfil the requirements of the applications in electric mobility. Two technological and scientific challenges are identified:
- understanding of the role of secondary phases on the coercivity. This will open the way to the implementation of techniques called "grain boundary engineering", well known for the NdFeB magnets to have remarkably improved the resistance to demagnetization.
- mastering the sintering step of these powders at low temperature (< 600°C) in order to avoid the decomposotion of the magnetic phase by grain boundary engineering
Simulation of a porous medium subjected to high speed impacts
The control of the dynamic response of complex materials (foam, ceramic, metal, composite) subjected to intense solicitations (energy deposition, hypervelocity impact) is a major issue for many applications developed and carried out French Atomic Energy Commission (CEA). In this context, CEA CESTA is developing mathematical models to depict the behavior of materials subjected to hypervelocity impacts. Thus, in the context of the ANR ASTRID SNIP (Numerical Simulation of Impacts in Porous Media) in collaboration with the IUSTI (Aix-Marseille Université), studies on the theme of modeling porous materials are conducted. They aim to develop innovative models that are more robust and overcome the theoretical deficits of existing methods (thermodynamic consistency, preservation of the entropy principle). In the context of this post-doc, the candidate will first do a literature review to understand the methods and models developed within IUSTI and CEA CESTA to understand their differences. Secondly, he will study the compatibility between the model developed at IUSTI and the numerical resolution methods used in the hydrodynamics computing code of the CEA CESTA. He will propose adaptations and improvements of this model to take into account all the physical phenomena that we want to capture (plasticity, shear stresses, presence of fluid inclusions, damage) and make its integration into the computation code possible. After a development phase, the validation of all this work will be carried out via comparisons with other existing models, as well as the confrontation with experimental results of impacts from the literature and from CEA database.
Design of a crystal growth process
Laser fusion facilities, like LMJ, require the use of large optical components. Some of them are large KDP or DKDP (KDP partially deuterated) plates extracted from single crystals.
Currently, DKDP single crystals are produced a by slow growth method were the growth time exceeds two years.
Here, we proposed to study a rapid growth method to reducing the growth time to a few months.
Postdoctoral position on the modeling of silicon spin qubits
A post-doctoral position is opened at the Interdisciplinary Research Institute of Grenoble (IRIG) of the CEA Grenoble (France) on the theory and modeling of silicon spin quantum bits (qubits). The selected candidate is expected to start at the beginning of year 2022, for up to two years.
Quantum information technologies on silicon have raised an increasing interest over the last few years. Grenoble is pushing forward an original platform based on the “silicon-on-insulator” (SOI) technology. In order to meet the challenges of quantum information technologies, is essential to support the experimental activity with state-of-the-art modeling. For that purpose, CEA is actively developing the “TB_Sim” code. TB_Sim is able to describe very realistic qubit structures down to the atomic scale when needed using atomistic tight-binding and multi-bands k.p models for the electronic structure of the materials. The aims of this postdoctoral position are to strengthen our understanding of spin qubits, and to progress in the design of efficient and reliable Si and Si/Ge spin qubit devices and arrays using a combination of analytical models and advanced numerical simulations with TB_Sim. Topics of interest include spin manipulation & readout in electron and hole qubits, exchange interactions in 1D and 2D arrays of qubits and operation of multi-qubit gates, sensitivity to noise (decoherence) and disorder (variability). This work takes place in the context of the EU QLSI project and will be strongly coupled to the experimental activity in Grenoble and among the partners of CEA in Europe.
Developement of relaxed pseudo-substrate based on InGaN porosified by electrochemical anodisation
As part of the Carnot PIRLE project starting in early 2021, we are looking for a candidate for a post-doctoral position of 24 months (12 months renewable) with a specialty in material science. The project consists in developing a relaxed pseudo-substrate based on III-N materials for µLEDs applications, especially for emission in red wavelength. The work will focus on developing an InGaN-based epitaxy MOCVD growth process, on an innovative substrate based on electrochemically anodized and relaxed materials. He (She) will have characterize both the level of relaxation of the re-epitaxied layer and its crystalline quality. These two points will promote the epitaxial regrowth of an effective red LED. The candidate will be part of the team, working on the PIRLE project, will be associated to the work on red LED growth and its optical and electro-optical characterizations.
Modeling of trapping and vertical leakage effects in GaN epitaxial substrates on Si
State of the art: Understanding and modeling vertical leakage currents and trapping effects in GaN substrates on Si are among the crucial subjects of studies aimed at improving the properties of GaN power components : current collapse and Vth instabilities reductions, reduction of the leakage current in the OFF state.
Many universities [Longobardi et al. ISPSD 2017 / Uren et al. IEEE TED 2018 / Lu et al. IEEE TED 2018] and industrials [Moens et al. ISPSD 2017] are trying to model vertical leakages but until now, no clear mechanism has emerged from this work to model them correctly over the entire range of voltage and temperatures targeted. In addition, modeling the effects of traps in the epitaxy is necessary for the establishment of a a robust and predictive TCAD model of device.
For LETI, the strategic interest of such a work is twofold: 1) Understanding and reducing the effects of traps in the epitaxy impacting the functioning of GaN devices on Si (current collapse, Vth instabilities…) 2) Reaching the leakage specifications @ 650V necessary for industrial applications.
The candidate will have to take charge in parallel of the electrical characterizations and the development of TCAD models:
A) Advanced electrical characterizations (I (V), I (t), substrate ramping, C (V)) as a function of temperature and illumination on epitaxial substrates or directly on finite components (HEMT, Diodes, TLM )
B) Establishment of a robust TCAD model integrating the different layers of the epitaxy in order to understand the effects of device instabilities (dynamic Vth, dynamic Ron, BTI)
C) Modeling of vertical conduction in epitaxy with the aim of reducing leakage currents at 650V
Finally, the candidate must be proactive in improving the different parts of the substrate
Modeling silicon-on-insulator quantum bit arrays
A post-doctoral position is open at the Interdisciplinary Research Institute of Grenoble (IRIG, formerly INAC) of the CEA Grenoble (France) on the theory and modeling of arrays of silicon-on-insulator quantum bits (SOI qubits). This position fits into an ERC Synergy project, quCube, aimed at developing two-dimensional arrays of such qubits. The selected candidate is expected to start between October and December 2019, for up to three years.
Many aspects of the physics of silicon qubits are still poorly understood, so that it is essential to support the experimental activity with state-of-the-art modeling. For that purpose, CEA is actively developing the “TB_Sim” code. TB_Sim relies on atomistic tight-binding and multi-bands k.p descriptions of the electronic structure of materials and includes, in particular, a time-dependent configuration interaction solver for the dynamics of interacting qubits.
The aims of this post-doctoral position are to improve our understanding of the physics of these devices and optimize their design, and, in particular,
- to model spin manipulation, readout, and coherence in one- and two-dimensional arrays of SOI qubits.
- to model exchange interactions in these arrays and assess the operation of multi-qubit gates.
The candidate will have the opportunity to interact with the experimental teams from CEA/IRIG, CEA/LETI and CNRS/Néel involved in quCube, and will have access to data on state-of-the-art devices.
Spectroscopy of AlN colored centers
The study of QD-like emission from deep emission centers in semiconductor has become an important topic in the general framework of quantum information processing and nanoscale sensing, the emblematic emission center being the N-V defect in diamonds. Recently, research has been conducted to evaluate the potential of other defects in various materials, for instance in GaN and BN. Oddly, not much is known on color centers in AlN, despite the many assets of this material : it can be epitaxially deposited, high quality bulk substrates are available, it can be processed as high quality factor microcavities.
We propose in this 12 months post-doc to explore the optical properties of deep luminescing centers in AlN. We will study by microphotoluminescence (either cw or time-resolved) various types of AlN : thin AlN grown on Si (possibly processed as membranes), thick AlN grown on sapphire, ensembles and single AlN nanowires.
Tunnel Junction for UV LEDs: characterization and optimization
Besides existing UV lamps, UV LEDs emitting in the UV-C region (around 265 nm) are considered as the next solutions for cost efficient water sterilization systems. But existing UV-C LEDs based on AlGaN wide band gap materials and related quantum well heterostructures still have low efficiencies which precludes their widespread use in industrial systems.
Analysing the reasons of the low efficiencies of present UV-C LEDs led us to propose a solution based on the use of a Tunnel Junction (TJ) inserted within the AlGaN heterostructure diode. p+/ n+ tunnel junctions are smart solutions to cope with doping related problems in the wide band gap AlGaN materials but give rise to extra tunneling resistances that need to be coped with. The post-doctoral work is dedicated to understanding the physics of tunneling processes in the TJ itself for a better control of the tunneling current.
The post-doctoral work will be carried out at the “Plate-Forme de Nanocaractérization” in CEA/ Grenoble, using different optical, structural and electrical measurements on stand-alone TJs or on TJs inserted within LEDs. The candidate will have to interact strongly with the team in CNRS/CRHEA in Sophia Antipolis where epitaxial growth of the diodes will be undertaken. The work is part of a collaborative project named "DUVET" financed by the Agence Nationale de la Recherche (ANR).
In situ synchrotron X-ray monitoring of the growth of defect-free two-dimensional materials by liquid-metal catalytic routes
The postdoctoral research project is part of a four-year European FET-Open project called LMCat (http://lmcat.eu/) bringing together five European labs, including the ESRF and the CEA-INAC, to develop the growth of defect-free two-dimensional materials by liquid-metal catalytic routes. A central lab will be established at the ESRF to develop an instrumentation/methodology capable of studying the ongoing chemical reactions on the molten catalyst. The growth by chemical vapor deposition at high pressure and temperatures will be characterized in situ, by means of two main techniques: Raman and X-ray scattering (Grazing Incidence X-Ray Scattering and Reflectivity). It will be complemented by theoretical calculations performed in Munich. The successful candidate will be in charge; together with a PhD student, of the in situ synchrotron X-ray scattering measurements, using the ESRF ID10 liquid scattering beamline (http://www.esrf.eu/UsersAndScience/Experiments/CBS/ID10) and the P08 beamline of PETRA-III (photon-science.desy.de/facilities/petra_iii/beamlines/p08_highres_diffraction/index_eng.html), in Desy.
You should hold a PhD in physics, chemistry or material science or closely related science. Previous experience of complex instrumental environment, MBE or CVD growth methods and / or with synchrotron X-ray scattering / diffraction / reflectivity, especially on liquids, will be an advantage. You should be motivated to work with an international team of young researchers with an experimental setup at the forefront of instrumental development, and ready to travel in Germany (Hambourg) for extended periods to perform some of the experiments. A good practice of English is mandatory. You should also have:
This is a full time, 3 year contract.
Please submit a 1 page cover letter stating the motivation, research experience and goals, ; a curriculum vitae, and contact information for 3 references.