Growth and Characterization of AlScN: A New Promising Material for Piezoelectric and Ferroelectric Devices
III-nitride semiconductors — GaN, AlN, and InN — have revolutionized the lighting market and are rapidly entering the power electronics sector. Currently, new nitride compounds are being explored in the search for novel functionalities. In this context, aluminum scandium nitride (AlScN) has emerged as a particularly promising new member of the nitride family. Incorporating scandium into AlN leads to:
* Enhanced Piezoelectric Constants: Making AlScN highly attractive for the fabrication of piezoelectric generators and high-frequency SAW/BAW filters.
* Increased Spontaneous Polarization: The enhanced polarization can be exploited in designing high-electron-mobility transistors (HEMTs) with very high channel charge densities.
* Ferroelectricity: The recently discovered (2019) emergence of ferroelectric properties opens up possibilities for developing new non-volatile memory devices.
Over the past five years, AlScN has become a major focus of research, presenting numerous open questions and exciting opportunities to explore.
This PhD thesis will focus on the study of the growth and properties of AlScN and GaScN synthesized by molecular beam epitaxy (MBE). The student will receive training in the use of an MBE system for the synthesis of III-nitride semiconductors and in the structural characterization of materials using atomic force microscopy (AFM) and X-ray diffraction (XRD). The variation of the polarization properties of the materials will be investigated by analyzing the photoluminescence of quantum well structures. Finally, the student will be trained in the use of simulation software to model the electronic structure of the samples, aiding in the interpretation of the optical results.
Development and Characterization of Terahertz Source Matrices Co-integrated in Silicon and III-V Photonics Technology
The terahertz (THz) range (0.1–10 THz) is increasingly exploited for imaging and spectroscopy (e.g. security scanning, medical diagnostics, non-destructive testing) because many materials are transparent to THz radiation and have unique spectral signatures. However, existing sources struggle to offer both high power and wide tunability: electronic sources (diodes, QCLs) deliver milliwatts but over narrow bands, while photonic emitters (photomixers in III–V semiconductors) are tunable across broad bands but emit only microwatts. This thesis aims to overcome these limitations by developing an integrated matrix of THz sources. The approach is based on photomixing two 1.55 µm lasers in III–V photodiodes to generate a phase-coherent THz current coupled to THz antennas.
Initially, the PhD student will experimentally investigate an existing 16-element THz antenna array (STYX project) CEA-CTReg/DNAQ: setting up the test bench, measuring phase coherence, optical coupling, radiation lobes, and constructive interference. These experiments will provide a scientific foundation for the subsequent design of an integrated photonic array on silicon. The student will simulate the photonic architecture (couplers, waveguides, phase modulators, Si/III–V transitions) synchronizing multiple InGaAs photodiodes. Prototyping will include the fabrication of silicon photonic circuits (CEA-LETI) and THz photodiodes/antennas in InP (III-V Lab or, to be confirmed, Heinrich-Hertz-Institut of the Fraunhofer—HHI), followed by their hybrid integration (bonding, alignment).
This thesis will also rely on close collaboration with the IMS laboratory (Bordeaux), which is nationally and internationally recognized for its expertise in silicon photonics and THz systems. IMS will provide complementary expertise in optical modeling, electromagnetic simulation, and experimental characterization, reinforcing the multidisciplinary strength of the project.
Finally, the ultimate goal of this thesis is to develop a proof-of-concept demonstrator with a few phase-locked THz emitters (e.g. 4–16) will be produced and characterized, showing enhanced beam directivity and output power thanks to constructive interference. This demonstration will pave the way for large-scale THz source arrays with significantly improved range and penetration for advanced THz imaging systems.