Topologically Isolated Mode Acoustic Resonators
Timing is a key function in electronic circuits. Beyond on-chip signals synchronization, it also allows the synchronization of wireless data transmissions. Accurate time references require stable frequency sources, which also benefit to sensor applications. The gold standard for time or frequency generation is still quartz resonators, which are however bulky and difficult to miniaturize. Research is therefore still ongoing to provide high quality factor (> 10,000) resonators, ideally capable of operating at frequencies of several GHz. A key to reach such high quality factors is to confine strongly the mechanical vibration of micro-size structures in order to make them insensitive to external perturbations. Recently, the field of topological acoustics has demonstrated the capability to confine elastic waves in very small volumes concentrated at the interface between periodic structure, and to provide extremely high quality factor resonances.
This PhD position focuses on exploiting topologically protected modes in piezoelectric microstructures to provide next generations of high quality factor resonators, which may be used in oscillators or even filter circuits. Leveraging the know-how of CEA Leti in the design and fabrication of such components, the PhD will be part of an international collaboration with well established academic laboratories (Politecnico di Milano, Imperial College FEMTO-ST Institute) and industrial partners.
The candidate will model and design structures supporting topologically protected modes, combinining finite element simulations with simplified numerical approaches which reduce computation times. He will follow the fabrication of demonstrators in collaboration with the process integration teams in the CEA Leti clean rooms, and carry on measurements of the proposed resonators.
High-Endurance Chalcogenide Memories for Next-Generation AI
Discover a unique phd opportunity where you will dive into the heart of innovation in memory technologies. You will develop strong expertise in areas such as electrical characterization and the understanding of degradation phenomena in chalcogenide-based memories.
By joining our multidisciplinary teams, you will play a key role in studying and improving the endurance of Phase-Change Memory (PCM) and Threshold Change Memory (TCM) devices—two promising technologies for high-performance artificial intelligence applications. You will take part in innovative projects combining scientific rigor and applied research on nanoscale devices, working closely with another CEA PhD student who conducts advanced physico-chemical analyses (TEM) to investigate degradation mechanisms.
You will have the opportunity to contribute actively to tasks such as:
Electrical characterization of PCM and TCM devices to analyze cycling-induced degradation
Development and evaluation of innovative programming protocols to extend endurance limits
Proposing solutions to improve the reliability and performance of next-generation memories
Regular collaboration and discussion with the CEA PhD student to interpret TEM results and draw conclusions about degradation mechanisms
Study of Failure Modes and Mechanisms in RF Switches Based on Phase-Change Materials
Switches based on phase change materials (PCM) demonstrate excellent RF performance (FOM <10fs) and can be co-integrated into the BEOL of CMOS processes. However, their reliability is still very little studied today. Failure modes such as heater breakage, segregation, or the appearance of cavities in the material are shown during endurance tests, but the mechanisms of these failures are not discussed. The objective of this thesis will therefore be to study the failure modes and mechanisms for different operating conditions (endurance, hold, power). The analysis will be carried out through electrical and physical characterizations and accelerated aging methods will be implemented.
Dies to wafer direct bonding: from physical mechanisms to the development of thin stackable dies
Direct dies-to-wafer bonding has become, in recent years, a major development axis in microelectronics and at the heart of many LETI projects, both in silicon photonics and for 3D applications involving hybrid bonding.
Due to their small size, die bonding allows the study of direct bonding edge effects and the implementation of new direct bonding processes that can shed original light on the mechanisms of direct bonding, which are already well studied at LETI. From a more technological perspective, the development of thin stackable chips will also be a very interesting technological key for many applications. This approach is a clever alternative to classical damascene processes to address the challenges related to the planarization of surfaces with low density of high topographies.
Selective deposition of oxides by ALD
For next-generation microelectronics, Area Selective Deposition (ASD)is a promising approach to simplify integration schemes for the most advanced technology nodes. These ASD approaches need to be adapted according to a trio comprising the material to be deposited, the growth surface, and the inhibited surface.
This PhD focuses on the area selective deposition of oxides (such as SiO2, Al2O3, …) on Si or SiO2 and not on silicon nitride (SiN), which is one of the most complex topics in ASD, and aims to evaluate the relevance of this type of process for simplifying the integration and the fabrication of advanced FDSOI transistors.
To develop this selective oxide deposition process, various approaches aiming at making SiN an inhibitor of the Atomic Layer Deposition (ALD) will be explored (plasma treatments, Small Molecular Inhibitors, combination of both, etc.). Dedicated surface characterizations will be carried out in order to better understand the mechanisms of inhibition at the origin of the selective deposition and allowing to achieve high selectivity for oxide thicknesses of 10 nm and above.
This PhD project will take place at CEA-LETI, within the advanced materials deposition department, in collaboration with LMI UMR 5615 CNRS/UCBLyon. The student will have access to the CEA-LETI 300 mm cleanroom fabrication platforms for thin film deposition by PEALD, the CEA nanocharacterization platform and gas-phase surface functionalization at LMI. Surface analyses and thin film characterizations (ellipsometry, XRR, AFM, FTIR, contact angle, SEM, XPS, ToF-SIMS) will be used to determine the best selectivity and understand the physico-chemical mechanisms.
Reducing damage and loading in high aspect ratio III-V etching
The growing demand for III-V semiconductors in high-efficiency photovoltaics, quantum photonics, and advanced imaging technologies requires innovative and cost-effective fabrication methods. This PhD project focuses on developing plasma etching processes for In-based III-V semiconductors to produce high aspect ratio (HAR) structures on large wafers from 100 to 300 mm. The research addresses two key challenges: understanding how etching process windows evolve with material loading and process conditions (physical vs. chemical dominance), and minimizing electrical degradation induced by HAR etching, which is critical for device performance.
These challenges are fundamentally linked to the low volatility of In-based etch byproducts, the need to balance kinetic and thermal energy inputs to enhance etch selectivity, and the management of etch loading effects for large-scale production. The experimental approach will leverage CEA-Leti's state-of-the-art facilities, including the Photonics platform for 2–4-inch wafer processing, which enables masking strategies (hard mask deposition, photolithography) and low-temperature (150°C) etching.
Characterization will involve SEM for etch profile analysis, XPS for surface composition, and TEM-EDX for sidewall quality assessment. Damage evaluation will be performed using near-infrared photoluminescence decay to measure minority carrier lifetime and identify recombination centers. The work aims to develop optimized HAR etching processes (aspect ratios >10, critical dimensions <1 µm) for In-based III-V materials, investigate pulsed plasma techniques to reduce etch-induced damage, and provide insights into defect formation mechanisms to guide process optimization for industrial applications.
Next-Gen Surface Analysis for Ultrathin Functional Materials
Advanced nanoelectronics and quantum devices rely on ultrathin oxides and engineered interfaces whose chemical composition, stoichiometry and thickness must be controlled with sub-nanometer precision. LETI is installing the first 300-mm multi-energy XPS–HAXPES tool with angle-resolved capability, enabling quasi in situ chemical metrology from deposition to characterization.
This PhD will develop quantitative, multi-energy and angle-resolved XPS/HAXPES methodologies for ultrathin oxides and oxynitrides, validate measurement accuracy, and establish robust protocols for quasi in situ transfer of sensitive layers. Applications include advanced CMOS stacks and quantum Josephson junctions, where sub-2 nm AlOx barriers critically determine device performance.
The project directly supports the development of next-generation quantum technologies, advanced photonics and energy-efficient microelectronics by improving the reliability and stability of nanoscale materials. The work will be carried out within a strong multi-partner framework.
Integrated material–process–device co-optimization for the design of high-performance RF transistors on advanced nanometer technologies
This PhD research focuses on the integrated co-optimization of materials, fabrication processes and device architectures to enable high-performance RF transistors on advanced nanometer-scale technologies. The work aims to understand and improve key RF figures of merit—such as transit frequency, maximum oscillation frequency, noise behaviour and linearity—by establishing clear links between material choices, process innovations and transistor design.
The project combines experimental development, structural and electrical characterization, and advanced TCAD simulations to analyse the strengths and limitations of different integration schemes, including FD-SOI and emerging 3D architectures such as GAA and CFET. Particular attention will be given to the engineering of optimized spacers, gate stacks, junction placement and epitaxial source/drain materials in order to minimize parasitic effects and enhance RF efficiency.
By comparing planar and 3D device platforms within a unified modelling and characterization framework, the thesis aims to provide technology guidelines for future generations of energy-efficient RF transistors targeting applications in 5G/6G communications, automotive radar and low-power IoT systems.
Multiscale modeling of rare earth ion emission from ionic liquids under intense electric fields
The main objective of this thesis is to model the mechanisms of rare earth ion emission from ionic liquids subjected to an intense electric field, in order to identify the conditions favorable to the emission of weakly complexed ions.
The aim is to establish rational criteria for the design of new ILIS sources suitable for the localized implantation of rare earths in photonic devices.
The thesis work will be based on large-scale molecular dynamics simulations, reproducing the emission region of a Taylor cone under an electric field.
The simulations will be compared with emission experiments conducted in parallel by the SIMUL group in collaboration with Orsay Physics TESCAN, using a prototype ILIS source doped with rare earths. Comparisons of measurements (mass spectrometry, energy distribution) will enable the models to be adjusted and the proposed mechanisms to be validated.
Development and Characterization of Terahertz Source Matrices Co-integrated in Silicon and III-V Photonics Technology
The terahertz (THz) range (0.1–10 THz) is increasingly exploited for imaging and spectroscopy (e.g. security scanning, medical diagnostics, non-destructive testing) because many materials are transparent to THz radiation and have unique spectral signatures. However, existing sources struggle to offer both high power and wide tunability: electronic sources (diodes, QCLs) deliver milliwatts but over narrow bands, while photonic emitters (photomixers in III–V semiconductors) are tunable across broad bands but emit only microwatts. This thesis aims to overcome these limitations by developing an integrated matrix of THz sources. The approach is based on photomixing two 1.55 µm lasers in III–V photodiodes to generate a phase-coherent THz current coupled to THz antennas.
Initially, the PhD student will experimentally investigate an existing 16-element THz antenna array (STYX project) CEA-CTReg/DNAQ: setting up the test bench, measuring phase coherence, optical coupling, radiation lobes, and constructive interference. These experiments will provide a scientific foundation for the subsequent design of an integrated photonic array on silicon. The student will simulate the photonic architecture (couplers, waveguides, phase modulators, Si/III–V transitions) synchronizing multiple InGaAs photodiodes. Prototyping will include the fabrication of silicon photonic circuits (CEA-LETI) and THz photodiodes/antennas in InP (III-V Lab or, to be confirmed, Heinrich-Hertz-Institut of the Fraunhofer—HHI), followed by their hybrid integration (bonding, alignment).
This thesis will also rely on close collaboration with the IMS laboratory (Bordeaux), which is nationally and internationally recognized for its expertise in silicon photonics and THz systems. IMS will provide complementary expertise in optical modeling, electromagnetic simulation, and experimental characterization, reinforcing the multidisciplinary strength of the project.
Finally, the ultimate goal of this thesis is to develop a proof-of-concept demonstrator with a few phase-locked THz emitters (e.g. 4–16) will be produced and characterized, showing enhanced beam directivity and output power thanks to constructive interference. This demonstration will pave the way for large-scale THz source arrays with significantly improved range and penetration for advanced THz imaging systems.