Selective epitaxial Regrowth for extended Base contact in High-Performance Antimonide-based HBT Transistors
With the rapid expansion of wireless networks and the imminent arrival of 6G, the need for highly efficient communication systems has never been more critical. In this context, frequencies beyond 140 GHz emerge as a key frontier, where cutting-edge technologies leverage advanced semiconductors like InP, delivering unmatched performance beyond what SiGe solutions can achieve. However, III-V components remain expensive, manufactured on small substrates (100 mm for InP), and incompatible with silicon production lines, which ensure higher industrial yields.
In this context, CEA-LETI, in collaboration with CNRS-LTM, is developing a new HBT transistor technology in which the base layer is made of antimonides, having already demonstrated frequency performance beyond the THz range. To enable integration with Si-CMOS fabrication processes, a novel approach for ohmic contact formation is required. This involves selective epitaxial regrowth of a suitable semiconductor material on the base layer of the HBT-GaAsSb transistor.
The PhD candidate will be responsible for identifying the optimal material that meets the required criteria, based on experiments conducted with the epitaxy team, advanced physical characterizations (ToF-SIMS, HR-TEM, EDX), and band structure modeling of the formed heterojunctions. This research will also be complemented by the fabrication of technological test structures to extract the key electrical parameters necessary for optimizing the DC and RF performance of the HBT transistor.
Towards eco innovative, sustainable and reliable piezoelectric technology
Are you looking for a Phd position at the intersection of eco-innovation and high-tech? This subject is for you!
You will participate in efforts aimed at reducing the environmental footprint of piezoelectric (PZE) technology applied to micro actuators and sensors, while maintaining optimal levels of electrical performance and reliability. Currently PZE technology primarily relies on PZT material (Pb(Zr,Ti)O3) which contains lead, as well as electrodes made from materials such as Pt, Ru, and Au, along with doping elements like La, Mn and Nb to enhance piezoelectric properties and electrical performance. These materials not only come with a significant ecological cost but are also facing proven or imminent shortages. In the context of the necessary frugality associated with the energy transition, this PhD position aims to explore more environmentally friendly and sustainable microsystem technologies. The research will create a comparative analysis assessing the ecological footprint, electromechanical performance, and reliability of existing technologies (with lead) versus those under development (lead free). To achieve these objectives, you will employ Life Cycle Analyses (LCA), electromechanical measurements, and reliability tests (accelerated aging tests).
This interdisciplinary research will encompass fields such as eco design materials science, and microelectronic manufacturing processes You will benefit from the support of laboratories specializing in microsystems manufacturing and integration processes, as well as electrical characterization and reliability Collaboration with the “eco innovation” unit at CEA Leti will also enhance the resources available for this project.
Increasing the electrothermal robustness of new SiC devices
Silicon Carbide (SiC) is a semiconductor with superior intrinsic properties than Silicon for high temperature and high power electronics applications. SiC devices are expected to be extensively used in the electrification transition and novel energy management applications. To fully exploit the SiC superior properties, the future semiconductor devices will be used under extreme biasing and temperature conditions. These devices must operate safely at higher current densities, higher dV/dt and higher junction temperatures than Si devices does.
The objective of this thesis is to study the SiC devices fabricated at LETI under these extreme operating conditions, and to optimize their design to fully use the theoretical potential of SiC. The thesis work will include several phases that will be strongly coupled:
- Advanced electro-thermal characterisation (50%), by proposing new approaches to testing components in a box or on a suitable support, using artificial intelligence (AI) tools for data extraction and processing. The work will include adapting standard measurement methodologies to the specific switching characteristics of SiC.
- An assessment (15%) of the design and technological parameters responsible for the operating limits of the components.
- A physico-chemical characterisation component (15%) to analyse failures under these extreme conditions.
- The inclusion of predictive models (20%) for the sensitivity of architectures to extreme conditions and faults, based on modelling.
Study of 3D pattern etch mechanisms into inorganic layers for optoelectronic applications
Optoelectronic devices such as CMOS Image Sensors (CIS) require the realization of 3D structures, convex microlenses, in order to focus photons towards the photodiodes defining the pixels. These optical elements are mandatory for the device efficiency. Their shape and dimension are critical for device performances. In the same way, devices based on diffractive optic and hyperspectral sensors are looking for complex multi-height structures. Finally, recent micro-display technologies for augmented reality (AR) and virtual reality (VR) require 3D structures difficult to achieve with conventional micro-fabrication technics.
Leti is at the state of the art on an alternative photolithography technics, so-called Grayscale. This process can produce a whole range of 3D structures not available with standard photolithography, such as concave, elliptic, pyramids and asymmetrical shapes. These structures could be used in a large number of application fields, like photonics and micro-displays (AR/VR). Once these structures achieved in photoresist, it is necessary to transfer them in an adapted functional layer using plasma etching. The etch mechanisms behind the transfer of micrometric 3D patterns into a polymer layer have been recently studied at Leti. To address new application needs, it is interesting to transfer these structures into silicon based inorganic layers because of their optical properties. Furthermore, the 3D pattern dimensions, currently few micrometers, need to be sub-micrometric for the most advanced technologies. In these condition, pattern transfer fidelity of 3D structures is even more challenging and it underlines why the etch mechanisms need to be well understood.
Currently the transfer into inorganic layers by plasma etching of submicronic 3D patterns obtained with Grayscale photolithography is not well studied in literature. Consequently, this thematic is innovative and has a real benefit. The goal of this PhD thesis is to study and understand the etch mechanisms in order to control the shape and dimension of the transferred structures. The work will be very experimental and will be mainly performed in Leti’s 300mm cleanroom. You will have access to a last generation plasma etch tool and numerous characterization technics. This thesis is in collaboration with the photolithography department and in interaction with different teams, such as the silicon platform and application department.
Study and evaluation of silicon technology capacities for applications in infrared bolometry
Microbolometers currently represent the dominant technology for the realization of uncooled infrared thermal detectors. These detectors are commonly used in the fields of thermography and surveillance. However, the microbolometer market is expected to grow explosively in the coming years, particularly with their integration into automobiles and the proliferation of connected devices. The CEA Leti LI2T, a recognized player in the field of infrared thermal detectors, has been transferring successive microbolometer technologies to the industrial partner Lynred for over 20 years. To remain competitive in this growing market for microbolometers, the laboratory is working on breakthrough microbolometers incorporating CMOS components as the sensitive element. In this context, the laboratory has initiated studies focusing on temperature-dependent silicon technology capabilities, with promising initial results not reported in the literature. The thesis topic fits into this context and aims to demonstrate the interest of these components for microbolometric applications. It will therefore cover the analytical modeling of these components and their associated physical effects, as well as the reading of such a component in a microbolometer imager approach. A reflection on technological integration will also be conducted. The student will benefit from several already realized technological lots to experimentally characterize the physical effects and familiarize themselves with the subject. To understand the encountered phenomena, the student will have access to the laboratory's entire test set-ups (semiconductor parameter tester, noise analyzer, optical bench, etc.) as well as the numerical analysis Tools (Matlab/Python, TCAD simulations, SPICE simulations, Comsol, etc.). By the end of the thesis, the student will be able to address the question of the interest of these components for microbolometric applications.
Thermally conductive yet electrically insulating polymer nanocomposite based on core-shell (nano)fillers oriented by magnetic field
Advances in power electronics, electric motors and batteries, for example, are leading to a significant increase in heat production during operation. This increase in power density combined with reduced heat exchange surfaces amplifies the challenges associated with heat dissipation. The absence of adequate dissipation leads to overheating of electronic components, impacting on their performance, durability and reliability. It is therefore essential to develop a new generation of heat dissipating materials incorporating a structure dedicated to this structure.
The objective and innovation of the PhD student's work will lie in the use of highly thermally conductive (nano)fillers that can be oriented in an epoxy resin in a magnetic field. The first area of work will therefore be to electrically isolate the thermally conductive (nano)charges with a high form factor (1D and 2D). The electrical insulation of these charges of interest will be achieved by a sol-gel process. The synthesis will be controlled and optimised with a view to correlating the homogeneity and thickness of the coating with the dielectric and thermal performance of the (nano)composite. The second part will focus on the grafting of magnetic nanoparticles (NPM) onto thermally conductive (nano)fillers. Commercial NPMs will be evaluated as well as grades synthesised in the laboratory. The (nano)composites must have a rheology compatible with the resin infusion process.
Optimisation of advanced mask design for sub-micrometer 3D lithography
With the advancement of opto-electronic technology, 3D patterns with sub micrometer dimensions are more and more integrated in the device, especially on imaging and AR/VR systems. To fabricate such 3D structures using standard lithography technique requires numerous process steps: multiple lithography and pattern transfer, which is time and resource consuming.
With optical grayscale lithography, such 3D structures can be fabricated in single lithography step, therefore reducing significantly the number of process steps required in standard lithography. For high volume manufacturing of such 3D patterns, optical grayscale lithography with Deep-UV (DUV), 248nm and 193nm are the most relevant, as it is compatible with industrial production line. This technique of 3D lithography is however more complex than it seems, which requires advance lithography model and data-preparation flow to design optical mask corresponding to the desired 3D pattern.
Magneto-ionic gating of magnetic tunnel junctions for neuromorphic applications
Magneto-ionics is an emerging field that offers great potential for reducing power consumption in spintronics memory applications through non-volatile control of magnetic properties through gating. By combining the concept of voltage-controlled ionic motion from memristor technologies, typically used in neuromorphic applications, with spintronics, this field also provides a unique opportunity to create a new generation of neuromorphic functionalities based on spintronics devices.
The PhD will be an experimental research project focused on the implementation of magneto-ionic gating schemes in magnetic tunnel junction’s spintronics devices. The ultimate goal of the project is to obtain reliable and non-volatile gate-control over magnetisation switching in three-terminal magnetic tunnel junctions.
One major challenge remains ahead for the use of magneto-ionics in practical applications, its integration into magnetic tunnel junctions (MTJ), the building blocks of magnetic memory architectures. This will not only unlock the dynamic control of switching fields/currents in magnetic tunnel junctions to reduce power consumption, but also allow for the control of stochasticity, which has important implications in probabilistic computing.
Design and fabrication of neuromorphic circuit based on lithium-iontronics devices
Neural Networks (NNs) are inspired by the brain’s computational and communication processes to efficiently address tasks such as data analytics, real time adaptive signal processing, and biological system modelling. However, hardware limitations are currently the primary obstacle to widespread adoption. To address this, a new type of circuit architecture called "neuromorphic circuit" is emerging. These circuits mimic neuron behaviour by incorporating high parallelism, adaptable connectivity, and in memory computation. Ion gated transistors have been extensively studied for their potential to function as artificial neurons and synapses. Even if these emerging devices exhibit excellent properties due to their ultra low power consumption and analog switching capabilities, they still need to be validated into larger systems.
At the RF and Energy Components Laboratory of CEA-Leti, we are developing new lithium-gated transistors as building blocks for deploying low-power artificial neural networks. After an initial optimization phase focused on materials and design, we are ready to accelerate the pace of development. These devices now need to be integrated into a real system to assess their actual performance and potential. In particular, both bio-inspired circuits and crossbar architectures for accelerated computation will be targeted.
During this 3-year PhD thesis, your (main) objective will be to design, implement, and test neural networks based on lithium-gated transistor crossbars (5x5, 10x10, 20x20) and neuromorphic circuits , along with the CMOS read and write logic to control them. The networks might be implemented using different algorithms and architectures, including Artificial Neural Network, Spiking Neural Networks and Recurrent Neural Networks, which will be then tested by solving spatial and/or temporal pattern recognition problems and reproduce biological functions such as pavlovian conditioning.
Low temperature selective epitaxial growth of SiGe(:B) for pMOS FD-SOI transistors
As silicon technologies for microelectronics continue to evolve, processes involved in device manufacturing need to be optimized. More specifically, epitaxy, a crystal growth technique, is being used to fabricate 10 nm technological node FD-SOI (Fully Depleted-Silicon On Insulator) transistors as part of CEA-Leti's NextGen project. Doped and undoped Si and SiGe semiconductor epitaxy is being developed to improve the devices' electrical performances. The thesis will focus on selective SiGe(:B) epitaxy for channels and source/drains of pMOS transistors. A comparison of SiGe and SiGe:B growth kinetics will be made between growth under H2, the commonly used carrier gas, and N2. Innovative cyclic deposition/etching (CDE) strategies will also be evaluated, with the aim of lowering process temperatures.