Merging Optomechanics and Photonics: A New Frontier in Multi-Physics Sensing
Optomechanical sensors are a groundbreaking class of MEMS devices, offering ultra-high sensitivity, wide bandwidth, and seamless integration with silicon photonics. These sensors enable diverse applications, including accelerometry, mass spectrometry, and gas detection. Optical sensors, leveraging photonic integrated circuits (PICs), have also shown great potential for gas sensing.
This PhD focuses on developing a hybrid multi-physics sensor, integrating optomechanical and optical components to enhance sensing capabilities. By combining these technologies, the sensor will provide unprecedented multi-dimensional insights, pushing MEMS-enabled silicon photonic devices to new limits.
At CEA-Leti, you will access world-class facilities and expertise in MEMS fabrication, photonics, and sensor integration. Your work will involve:
-Sensor Design – Using analytical Tools and simulation software for numerical analysis to optimize device architecture.
-Cleanroom Fabrication – Collaborating with CEA’s expert teams to develop the sensor.
-Experimental Characterization – Conducting optomechanical and optical evaluations.
-Benchmarking & Integration – Assessing performance with optics, electronics, and fluidics.
This PhD offers a unique chance to merge MEMS and silicon photonics in a cutting-edge research environment. Work at CEA-Leti to pioneer next-generation sensor technology with applications in healthcare, environmental monitoring, and beyond. Passionate about MEMS, photonics, and sensors? Join us and help shape the future of optomechanical sensing!
Optimizing cryogenic super-resolution microscopy for integrated structural biology
Super-resolution fluorescence microscopy (“nanoscopy”) enables biological imaging at the nanoscale. This technique has already revolutionized cell biology, and today it enters the field of structural biology. One major evolution concerns the development of nanoscopy at cryogenic temperature (“cryo-nanoscopy”). Cryo-nanoscopy offers several key advantages, notably the prospect of an extremely precise correlation with cryo-electron tomography (cryo-ET) data. However, cryo-nanoscopy has not provided super-resolved images of sufficiently high quality yet. This PhD project will focus on the optimization of cryo-nanoscopy using the Single Molecule Localization Microscopy (SMLM) method with fluorescent proteins (FPs) as markers. Our goal is to significantly improve the quality of achievable cryo-SMLM images by (i) engineering and better understanding the photophysical properties of various FPs at cryogenic temperature, (ii) modifying a cryo-SMLM microscope to collect better data and (iii) developing the nuclear pore complex (NPC) as a metrology tool to quantitatively evaluate cryo-SMLM performance. These developments will foster cryo- correlative (cryo-CLEM) studies linking cryo-nanoscopy and cryo-FIB-SEM-based electron tomography.
Photonic Spiking Neural Networks based on Q-switched laser integrated on Silicon
Neuromorphic networks for signal and information processing have acquired recently a renewed interest considering the more and more complex tasks that have to be solved automatically in current applications: speech recognition, dynamic image correlation, rapid decision processing integrating a plurality of information sources, behavior optimization, etc… Several types of neuromorphic networks do exist and, among them, the spiking type (SNN), that is, the one closest in behavior to the natural cortical neurons. SNN are the ones who seem to be able to offer a best energy efficiency and thus offer scalability. Several demonstrations have been made in this domain with electronic circuits and more recently with photonic circuits. For these, the dense integration potential of silicon photonics is a real advantage to create complex and highly connected circuits susceptible to lead to complete demonstrations. The PhD goal is to exploit a photonics spiking neuromorphic network architecture based on pulsed (Q-switched) lasers interconnected by a dense and reconfigurable optical network on chip mimicking the synaptic connections. A complete laser, neuron then circuit model is expected with, in the end, the practical demonstration of an application in mathematical data processing (to be defined).
Development of the Compton-TDCR Method for Scintillator Metrology
The objectives of this PhD thesis lie upstream of the applied domain, specifically in the field of radionuclide metrology. The research aims to obtain essential information for a deeper understanding of scintillation mechanisms. This topic represents a new discipline within the national metrology laboratory, currently nonexistent in other laboratories, and focuses specifically on scintillator metrology. The work will be centered on instrumentation and data analysis, enabling a refined understanding of the underlying physical phenomena. The PhD will be co-supervised by Benoit Sabot (expert in radioactivity metrology) and Christophe Dujardin (expert in scintillation).
One of the primary experimental objectives of this PhD is the development and implementation of the new Compton-TDCR setup [7], designed for the absolute measurement of scintillation yield as a function of electron energy. This system will be designed using 3D printing technology and will integrate high-purity germanium (GeHP) detectors to enhance measurement precision. After characterizing these detectors in terms of energy resolution and efficiency, they will be integrated into the final experimental setup. The PhD candidate will be responsible for signal processing using a digital module generating List-Mode files. The data will then be analyzed using an existing Rust-based software with a Python interface, which is currently limited to four channels. Given that the new setup will incorporate up to three GeHP detectors in addition to three photomultiplier channels, the software must be adapted to ensure optimal processing of the acquired data. Following fine-tuning of the electronics and a series of experimental tests, the required software modifications will be implemented to enable full data exploitation from the platform.
Once this initial phase is completed and the platform is fully operational, the candidate will focus on investigating scintillation phenomena. The first studies will examine standard scintillating materials, such as organic (liquid or plastic) and inorganic scintillators. Subsequently, the research will extend to less explored materials, such as porous scintillators. This phase will involve close collaboration with the University of Lyon, particularly with the Institut Lumière Matière, where complementary measurements will be performed to refine the analysis of scintillation phenomena, complete the laboratory findings, and develop simulations that integrate various experimental approaches.
The ultimate goal of this setup is to establish a metrology methodology for scintillators, enabling access to the response curve of these materials as a function of the energy of electrons interacting within them, as well as their temporal properties. This work will pave the way for new ionizing radiation measurement techniques and will make a significant contribution to the scientific community in this field.
Design, fabrication, and characterization of GeSn alloy-based laser sources for mid-infrared silicon photonics
You will design and fabricate laser and LED sources based on GeSn alloy in a cleanroom environment. These novel group-IV direct-bandgap materials, epitaxially grown on 200 mm Si wafers, are considered CMOS-compatible and hold great promise for the development of low-cost mid-infrared light sources. You will characterize these light sources using a mid-infrared optical test bench, with the goal of their future integration into a Germanium/Silicon photonic platform. Additionally, you will assess the feasibility of gas detection within a concentration range from a few dozen to several thousand ppm.
The objectives of the PhD are to:
• Design efficient GeSn (Si) stack structures that confine both electrons and holes while providing strong optical gain.
• Evaluate the optical gain under optical pumping and electrical injection at different strain levels and doping concentrations.
• Design and fabricate laser cavities with strong optical confinement.
• Characterize the fabricated devices under optical and electrical injection as a function of their strain state at both room and low temperatures.
• Achieve electrically pumped continuous-wave group-IV lasers.
• Understand the physical phenomena that may impact the material and device performance for light emission.
• Characterize the best-fabricated devices for low-cost environmental gas detection applications.
This work will involve collaborations with international laboratories working on the same dynamic research topic.
Study of new photodiode architecture for IR imagers
In the field of high-performance infrared detection, CEA-LETI plays a leading role in the development of the HgCdTe material, which today offers such performance that it is integrated into the James Webb Space Telescope (JWST) and allows the observation and study of deep space with unparalleled precision to date. However, we believe that it is still possible to make a significant step forward in terms of detection performance. Indeed, it seems that a fully depleted structure, called a PiN photodiode, could further reduce the dark current (and thus reduce noise and gain sensitivity at low photonic flux) compared to the non-fully depleted structures currently used. This architecture would represent the ultimate photodiode and would allow either a further increase in performance at a given operating temperature or a significant increase in the operating temperature of the detector, with the potential to open new fields of application by greatly simplifying cryogenics.
Your role in this thesis work will be to contribute to the development of the ultimate photodiode for very high-performance infrared detection, characterize and simulate the PiN photodiodes in HgCdTe technology manufactured on our photonic platform.
Candidate Profile:
You hold a Master's degree in optoelectronics and/or semiconductor material physics and are passionate about applied research.
The main technical skills required are: semiconductor component physics, optoelectronics, data processing, numerical simulations, interest in experimental work to carry out characterizations in a cryogenic environment but also theoretical work to carry out numerical simulations.
The PhD student will be integrated into a multidisciplinary team ranging from the growth of II-VI materials to electro-optical characterization, including microelectronics manufacturing processes in clean rooms and the packaging issues of such objects operating at low temperature.
3D interferometric imaging system with reception module in integrated optics
3D sensing by capturing depth images, is a key function in numerous emerging applications such as augmented reality, robotics and telemedicine. The laboratory has developed an innovative 3D sensing micro-optical prototype, using a frequency modulated Lidar technology with simultaneous illumination of the whole scene. The next step is the miniaturization of the setup with integrated optics. A first PhD is ongoing in the laboratory, focusing on the integration of the illumination module.
The proposed PhD will target the definition of an integrated optics architecture for the reception module. The main objective is to realize the beam recombination with integrated optics, using waveguides and grating couplers, to enable the heterodyne mixing of light back-scattered by the scene with the local oscillator. The candidate will design these integrated optical components in connection with the refractive optical system, simulate the propagation of the beams and interference using Lumericaland Zemaxsoftwares, contribute to device realization in clean room, perform the optical characterization of the components, and experimentally validate the proof of concept of depth imaging with the miniaturized prototype.
Depending on the progress of the developments, the PhD will include the development of a module combining the illumination and reception functions in a single component. Several patents, publications and presentations in international conferences are expected in the framework of this PhD.
development of capacitive IIIV-Silicon modulators for emerging applications in silicon photonics
The proposed thesis work consists in developing phase modulators based on the integration of IIIV-Silicon hybrid capacitors in silicon waveguides, at a wavelength of 1.55µm to meet the emerging demands of photonics (optical computing on chip, LIDAR). Unlike telecom/datacom applications, which have enabled the emergence of integrated silicon photonics, these new application fields involve circuits that require a very large number of phase modulators. All-silicon modulators based on PN junctions, which have optical losses of several dB and centimeter sizes, are a bottleneck to the emergence of these applications.
IIIV-Si hybrid capacitors can allow, thanks to the electro-optical properties of IIIV materials, to reduce the size of silicon modulators by an order of magnitude and improve their energy efficiency (reduction of optical losses). First functional modulators have been designed, fabricated and tested. The first step will be to study in details their performance (losses, efficiency, speed, hysteresis) and to understand their limitations, using the available photonic simulation tools and electrical characterization methods (C(V), interface charge density, DLTS, etc.). In particular, this will involve better understanding the impact of the manufacturing process on the electro-optical properties. In a second step, the doctoral student will propose improvements to the designs and manufacturing processes (in collaboration with our microfabrication specialists), and will validate them experimentally using hybrid capacities and modulators integrating these capacities.
improving effiiciency and directivity in color conversion µLEDs with metasurfaces
In the field of augmented reality, the development of full color µLEDs matrices is a critical step towards miniaturizing and simplifying the optical system. Current pixel architectures in microLEDs displays are based on color conversion. Short wavelength emission from a first active material is absorbed by a second active layer to be re-emitted at longer wavelength. In current architectures, re-emission follows a lambertian profile making them unsuitable for AR/VR applications.
Recent work by the Charles Fabry laboratory - Institut d’Optique, as part of E. Bailly's thesis, has demonstrated that combining metasurfaces with color converters can enable shaping the radiation pattern. The primary goal of this thesis is to apply this innovative method by integrating it with blue GaN µLEDs developed at CEA-LETI.
Throughout this thesis, the student will first design the devices using optical simulations, aiming to optimize them for both efficiency and directional angular radiation pattern. Following this, the student will fabricate the devices in the clean room at LETI and perform opto-electrical characterization.
The initial design phase will primarily take place at the Quantum Nanophotonics and Plasmonics team of Charles Fabry laboratory - Institut d’Optique, in Saclay, under the supervision of the thesis director. The student will then move to CEA-LETI in Grenoble for the fabrication, characterization and comparison with simulation results.
The selected student will benefit from the extensive expertise in nano-photonics and simulation at the Charles Fabry laboratory, as well as the technological, simulation, and characterization expertise in µLEDs at CEA-LETI.
The Quantum Nanophotonics and Plasmonics at Institut d’Optique team investigates the physics and engineering of spontaneous light emission (fluorescence, incandescence, electroluminescence), at different scales (quantum regime with single photon and single atoms, collective effects, photon condensates, condensed matter systems…).
The LITE (Emissive Technologies Integration Laboratory) at CEA-LETI focuses on manufacturing microemitting devices (µLED, OLED, LCD) in a silicon microelectronics foundry-type environment. This includes, for example improving µdisplays performances, made above ASICs, while reducing the pixel size, or demonstrating new use cases of these light sources in the field of biomedical optical sensors.
Development of micro-optic strcture for uncooled infrared imaging sensor
In this thesis, we aim to incorporate a low-resolution angular sorting function capable of discerning the primary direction of incident infrared flux. This information is crucial for enhancing image processing algorithms, thereby facilitating faster automatic focusing, improved image segmentation, and more accurate depth estimation.
To achieve this functionality, a micro-optics network at pixel level must be designed and realised. At present, we are considering two competitive approaches: refractive microlenses and meta-surfaces. As a PhD student, your responsibilities will include:
?- Establishing the preliminary specifications for these microlenses
?- Designing the micro-optics using numerical simulation and predicting their performance
?- Overseeing the manufacturing of these micro-optics in a clean room environment
?- Characterising the micro-optics on a dedicated laser bench and performing a proof of concept by coupling them with an infrared imager
You will be fully integrated into the Laboratory of Thermal and THz Imaging of the CEA Leti which develops, realizes, and characterizes imaging technologies based on micro-bolometers.