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Thesis
Home   /   Thesis   /   Advanced fully-depleted Silicon-on-insulator devices for Radio-Frequency applications

Advanced fully-depleted Silicon-on-insulator devices for Radio-Frequency applications

Electronics and microelectronics - Optoelectronics Emerging materials and processes for nanotechnologies and microelectronics Engineering sciences Technological challenges

Abstract

The PhD will be performed in the NEXTGEN project aimed at developing the next generation of Silicon-on-insulator devices. Our laboratory is driving the development of the RF active devices: this is a great opportunity to carry out fundamental research using state-of-the art processing equipment and characterization instruments while working in close collaboration with our industrial partners.

you will expected to engage in tasks encompassing:
- perform back-of the-envelope estimation of device properties and assess performace impact of technological choices
- Perform and/or analyze TCAD simulations to gain insight in the RF device behaviour
- data-mining on engineering measurements: grasp the relevant information and identify trends or correlations
- perform extensive periods of time in the lab to conduct or participate in on-wafer RF characterization champaign.
Based on you profile or expectations, above tasks may be dynamically rebalanced during the thesis.

Laboratory

Département Composants Silicium (LETI)
Service des Composants pour le Calcul et la Connectivité
Laboratoire des Transistors Avancés
Université Grenoble Alpes
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