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Thesis
Home   /   Thesis   /   Anisotropies and deformations induced by doping in the latest generation of infrared photodiodes

Anisotropies and deformations induced by doping in the latest generation of infrared photodiodes

Condensed matter physics, chemistry & nanosciences Photonics, Imaging and displays Solid state physics, surfaces and interfaces Technological challenges

Abstract

This thesis concerns the field of HgCdTe infrared detectors for astrophysical applications, for which the Infrared Laboratory of CEA -Leti is one of the world leaders.
The candidate will join the infrared laboratory, which includes the entire detector production process. As a participant in all discussions on the development of CdHgTe samples, he will produce them using the technological means of elaboration available in the Leti clean room, in collaboration with experts in the field.
These samples will then be characterized using our access to synchrotron radiation from ESRF as well as the nano-characterization platform of CEA-Grenoble equipped with a set of state-of-the-art characterization techniques. By studying the changes induced by variations in the sample preparation process using Laue micro-diffraction and SEM-EDX, simultaneous 2D mapping at a submicron scale of local stress and chemical composition will be accessed.
The challenge of this thesis will be to analyse the correlations between chemical composition and local stress, in relation to the specificities of the preparation process. The objective will be to study the mechanisms behind anisotropic behaviour in the structures of interest.

Laboratory

Département des Plateformes Technologiques (LETI)
Service Matériaux et Technologie pour la Photonique (1)
Laboratoire d’integration technologique pour la photonique
Université Grenoble Alpes
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