The integration of GaN (Gallium Nitride) components in power applications requires taking into account the very fast switching speed of these transistors. Moreover, if we want to switch currents of the order of tens of ampere, it is essential to bring the control circuit as close as possible to the power elements. This can be done in two ways: integrate the control chip and the power chip in the same box or integrate these two elements on the same chip.

The best option being the second, it is then necessary to perform logical functions in GaN allowing to design a control circuit that will be inserted between the output signals of a microcontroller and the power transistor or transistors GaN.

This development will be based on the technological bricks made at Leti from MIS buried grid components ( Metal, Insulating, Semiconductor) and will allow to enhance this technology by showing its advantages ( Switching speed ( a few nanoseconds), operating at temperatures (above 150°C)) relative to the state of the art.

First, after a thorough bibliography on the subject, it will be asked to calibrate and use models (Spice type) active and passive components to simulate basic logical functions and to assist in the complete digital design of the control circuit.

A second part will consist in drawing the set of masks, followed by the manufacturing of the circuit on chip integrating the control function as well as the power transistors.

In the following, it will be required to electrically characterize the circuit in an environment close to a real application. This step will be followed by an improvement pass in order to increase the reliability and robustness of the circuit in a wide range of temperature and frequency.