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Thesis
Home   /   Thesis   /   Dopant profiling of very highly doped specimens by advanced transmission electron microscopy.

Dopant profiling of very highly doped specimens by advanced transmission electron microscopy.

Condensed matter physics, chemistry & nanosciences Solid state physics, surfaces and interfaces

Abstract

The student will be trained in state-of-the-art transmission electron microscopy. We will combine electron holography, with deformation, phase/structure and chemical mapping on the same specimen. Advanced data processing techniques will be developed in order to combine the different maps to provide information about the total dopant concentration, the quantity of dopants on substitutional sites, and the active dopant concentrations. This work will provide methodology to assess the effectiveness of the different processes that are used for doping in advanced CMOS research. This includes FD-SOI 10 nm transistors and smaller which is the focus of the new European chips act and seen as strategic for European technological sovereignty. This work done within the Aidas2 project will also feature a 3 month research visit to FZG Julich in Germany.

Laboratory

Département des Plateformes Technologiques (LETI)
Service Caractérisation des Matériaux et Composants
Autre laboratoire
Université Grenoble Alpes
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