3D sequential integration enables to achieve the highest 3D contact density between stacked levels compared to other existing techniques. However it requires to process stacked devices with a limited thermal budget. Leti institute is pioneer in this domain and has a unique expertise on low temperature devices for computing applications. The goal of this Phd thesis goal is to develop a new device adapted to sensing application. Gate stack is particularly critical and innovations are required to optimize its quality while staying compatible with 3D sequential integration thermal budget limitation. Developping low temperature junction is also a big challenge.

The student will contribute to the fabrication, characterization and optimization of these new low temperature device in order to meet device specifications for sensing applications. During the PhD thesis, the student will have to interact with different teams with a wide field of expertise: process experts, morphologiocal characterization, electrical characterization and simulation.