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Thesis
Home   /   Thesis   /   Investigate electron and hole transport layers for high temperature stability III-V quantum dot photodiode devices

Investigate electron and hole transport layers for high temperature stability III-V quantum dot photodiode devices

Engineering sciences Materials and applications Photonics, Imaging and displays Technological challenges

Abstract

Colloidal Quantum Dots (QD) are novel building blocks for the fabrication of image sensors with high performance tunable light detection in the SWIR wavelength range but currently exhibit undesired degradation under high thermal stress. Thermal degradation can be significantly improved by optimizing the device materials (contacts, hole transport layer (HTL), electron transport layer (ETL) and encapsulation), film thicknesses, and deposition processes used to make quantum film (QF) photodiode devices. As such, a detailed investigation into many different HTL, ETL and top electrode materials will be pursued to find the best candidates to overcome the current limitations. Materials selection and deposition processes for these layers will be chosen and studied among a variety of existing materials developed at LETI. QD films with tunable absorption from 1-2.5 µm will be prepared by STMicroelectronics and CEA-IRIG in collaboration with other partners. The QD patterning step for the fabrication of the devices and the electro-optical testing will be performed internally at LETI with support from STMicroelectronics.

Laboratory

Département des Plateformes Technologiques (LETI)
Service Matériaux et Technologie pour la Photonique (1)
Laboratoire des Matériaux pour la photonique
Université Grenoble Alpes
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