About us
Espace utilisateur
INSTN offers more than 40 diplomas from operator level to post-graduate degree level. 30% of our students are international students.
Professionnal development
Professionnal development
Find a training course
INSTN delivers off-the-self or tailor-made training courses to support the operational excellence of your talents.
Human capital solutions
At INSTN, we are committed to providing our partners with the best human capital solutions to develop and deliver safe & sustainable projects.
Home   /   Thesis   /   Modeling and Optimization of 2D Material-Based Field-Effect Transistors: From Multi-Physics Simulations to Atomic-Scale Insights

Modeling and Optimization of 2D Material-Based Field-Effect Transistors: From Multi-Physics Simulations to Atomic-Scale Insights

Condensed matter physics, chemistry & nanosciences Numerical simulation Solid state physics, surfaces and interfaces Technological challenges


Field-effect transistors employing 2D materials are emerging as promising candidates due to their superior mobility and atomic thinness. Nonetheless, this technology faces multiple challenges, including minimizing contact resistances, controlling variability, and optimizing short-channel transistors (< 10 nm). At CEA-Leti, a concerted experimental and computational effort is underway to address these issues and propel the development of 2D material-based technologies.

This doctoral research project is situated within this context, aiming to harness multi-physics simulations to evaluate and enhance the performance of 2D material-based FETs by exploring the interplay between technological parameters and device performance. The flexibility in choosing materials and geometric configurations opens the door to pioneering research directions. A pivotal aspect of this work will involve coupling Technology Computer-Aided Design (TCAD) simulations with ab initio methods to achieve a comprehensive understanding of the devices' structural and electronic behaviors at the atomic level.

The project benefits from access to state-of-the-art computational resources and software (Sentaurus, VASP, GPAW, etc.), supported by CEA-Leti's expertise in simulation methodologies and close collaboration with experimental teams. This doctoral endeavor offers a unique opportunity to develop a wide-ranging skill set in electronic device simulation, contributing to the scientific community through presentations at leading international conferences and publications in esteemed journals.


Département Composants Silicium (LETI)
Service Caractérisation, Conception et Simulation
Laboratoire de Simulation et Modélisation
Université Grenoble Alpes
Top envelopegraduation-hatlicensebookuserusersmap-markercalendar-fullbubblecrossmenuarrow-down