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Thesis
Home   /   Thesis   /   TEM-operando study

TEM-operando study

Abstract

This PhD topic will take advantage of the recent developments of Transmission Electron Microscopy (TEM) and Electron Holography in-operando methods to explore new generations of Magnetic Random Access Memories (MRAM), such as spin-orbit torques (SOT) or voltage control of magnetic anisotropy (VCMA).

SOT- and VCMA-based MRAM are two promising routes for improving writing speed and power consumption of next generation of MRAM, and they are currently intensely developed and studied at Spintec. SOT relies on non magnetic material to generate spin current and to control the storage layer of MRAM, while Voltage-Controled Magnetic Anisotropy (VCMA) make use of electric fields to reverse magnetization. On the other hand, Transmission Electron Microscopy is a unique tool that offers a sub-nanoscale resolution joined with a magnetic sensitivity through Electron Holography as well as chemical information with X-rays (EDX) and Electron energy loss (EELS) spectroscopies (see image).

Laboratory

Institut de Recherche Interdisciplinaire de Grenoble
DEPHY
Laboratoire Spintec
Université Grenoble Alpes
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