About us
Espace utilisateur
Education
INSTN offers more than 40 diplomas from operator level to post-graduate degree level. 30% of our students are international students.
Professionnal development
Professionnal development
Find a training course
INSTN delivers off-the-self or tailor-made training courses to support the operational excellence of your talents.
Human capital solutions
At INSTN, we are committed to providing our partners with the best human capital solutions to develop and deliver safe & sustainable projects.
Thesis
Home   /   Thesis   /   The impact of intrinsic and of extrinsic defects on the dynamic Ron and off-state leakage current of lateral GaN power devices

The impact of intrinsic and of extrinsic defects on the dynamic Ron and off-state leakage current of lateral GaN power devices

Condensed matter physics, chemistry & nanosciences Emerging materials and processes for nanotechnologies and microelectronics Solid state physics, surfaces and interfaces Technological challenges

Abstract

The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage. However, this comes at the cost of increased intrinsic defects together with degraded dynamic on-resistance (Ron) and current-collapse effects.
The aim of this project is compare the performance of HEMTs devices containing different quantities of extrinsic defects (such as C atoms) and intrinsic defects (such as dislocations), as a function of growths conditions to guide toward optimized buffer structure with good dynamic Ron and low vertical leakage simultaneously.

Laboratory

Département des Plateformes Technologiques (LETI)
Service Matériaux et Technologie pour la Photonique (1)
Laboratoire des Matériaux pour la photonique
Université Grenoble Alpes
Top envelopegraduation-hatlicensebookuserusersmap-markercalendar-fullbubblecrossmenuarrow-down