Commercial aviation accounts for about 2.5% total world CO2 emissions (1bT). A true, long-term, clean perspective eliminating a significant part of CO2 emissions is electric. One viable solution could be the hybrid airplane in which gas turbines are used for take-off and landing and in-flight cruising is electrically powered. Such a solution requires high voltage components. Fundamental research is required to optimize materials for integration into electronic components, capable of sustaining these power ratings.

The original idea of the Ferro4Power proposal is to increase the range of applications of Ga2O3 and GaN based devices by introducing a high breakdown, power electronics compatible, ferroelectric layer into the device stack. The up or down polarization state of the ferroelectric layer will provide an electric field capable of modulating the Ga2O3 and GaN valence and conduction bands, and hence the properties of possible devices, such as Schottky diodes (SBD), hybrid depletion mode transistors for Ga2O3 and high frequency HEMTs for GaN. Our hypothesis is to control the electronic bands of Ga2O3 and GaN using an adjacent AlBN.

We will explore the chemistry and electronic structure of AlBN/Ga2O3 and AlBN/GaN interfaces, focusing on the key phenomena of polarization screening, charge trapping/dissipation, internal fields. The project will use advanced photoelectron spectroscopy techniques including synchrotron radiation induced Hard X-ray photoelectron spectroscopy and Photoemission electron microscopy as well as complementary structural analysis including high-resolution electron microscopy, X-ray diffraction and near field microscopy.

The results should therefore be of interest to both physicists studying fundamental aspects of functionality in artificial heterostructures and engineers working in R & D applications of power electronics.