III-nitride semiconductors — GaN, AlN, and InN — have revolutionized the lighting market and are rapidly entering the power electronics sector. Currently, new nitride compounds are being explored in the search for novel functionalities. In this context, aluminum scandium nitride (AlScN) has emerged as a particularly promising new member of the nitride family. Incorporating scandium into AlN leads to:

* Enhanced Piezoelectric Constants: Making AlScN highly attractive for the fabrication of piezoelectric generators and high-frequency SAW/BAW filters.
* Increased Spontaneous Polarization: The enhanced polarization can be exploited in designing high-electron-mobility transistors (HEMTs) with very high channel charge densities.
* Ferroelectricity: The recently discovered (2019) emergence of ferroelectric properties opens up possibilities for developing new non-volatile memory devices.

Over the past five years, AlScN has become a major focus of research, presenting numerous open questions and exciting opportunities to explore.

This PhD thesis will focus on the study of the growth and properties of AlScN and GaScN synthesized by molecular beam epitaxy (MBE). The student will receive training in the use of an MBE system for the synthesis of III-nitride semiconductors and in the structural characterization of materials using atomic force microscopy (AFM) and X-ray diffraction (XRD). The variation of the polarization properties of the materials will be investigated by analyzing the photoluminescence of quantum well structures. Finally, the student will be trained in the use of simulation software to model the electronic structure of the samples, aiding in the interpretation of the optical results.