For optical communication and display applications (display, AR/VR), the need for micro-displays with high resolution µLEDs GaN is becoming increasingly important. The formation of the pixel constitutes the critical brick because it generates defects on the sides of the µLED, which limit the emission performance of the device. These degradations have even more impacts on electro-optical performance for aggressive LED pitches.
The subject proposes a comprehensive approach, ranging from the development of new GaN etching strategies limiting damage to the pixel edges, to its characterization through dedicated direct means, and validated on a complete device by an electro-optical test vehicle.