Transition Metal Dicalchogenides (TMDs) have displayed interesting properties in numerous fields of nanotechnoogy (CMOS, memory, sensors, photonics etc.), and emerge as promising materials thanks to their functional properties and potential for co-integration, facilitated by their intrinsic features (van der Waals materials). However, their applicative impact remains uncertain due to the challenge of developing their processing in a standard nanoelectronics environment while maintaining a good control of their fundamental properties. The candidate will quantify the electrical properties of various 2D materials in test structures derived from a silicon technology baseline (TLM, Cross-Bridge Kelvin Résistors, MOS capacitors), in order to provide guidelines for device prototyping.
Specifically, the primary aim is to assess the interest of these materials as interface layers rather than for transport, for improving:
- The contact resistivity via Fermi-level depinning.
- Control by the Gate over the inversion charge in the channel via a negative differential capacitance effect.