About us
Espace utilisateur
INSTN offers more than 40 diplomas from operator level to post-graduate degree level. 30% of our students are international students.
Professionnal development
Professionnal development
Find a training course
INSTN delivers off-the-self or tailor-made training courses to support the operational excellence of your talents.
Human capital solutions
At INSTN, we are committed to providing our partners with the best human capital solutions to develop and deliver safe & sustainable projects.
Home   /   Post Doctorat   /   Aging study of silicon nanowires used as piezoresistive detection gauges for achieving inertial MEMS sensors.

Aging study of silicon nanowires used as piezoresistive detection gauges for achieving inertial MEMS sensors.

Electronics and microelectronics - Optoelectronics Engineering sciences Materials and applications


Today’s sensors are present in all areas: housing, automotive... Thanks to recent developments in microelectronics, new generations of sensors combine high performance, small size and low cost. In this context, CEA-LETI has proposed an innovative concept called M&NEMS for the realization of inertial sensors such as accelerometers, magnetometers and gyroscopes. The M&Nems concept combines MEMS and NEMS to take advantage of the great inertia generated by a MEMS mass and the high detection sensitivity of piezoresistive silicon nanowires. Demonstrators have already been carried out and have shown the good potential of the M&Nems concept. One of the main challenges which remain to overcome is the reliability of sensors based on this concept and specifically the reliability of the piezoresistive nanowires. The research work will be mainly focused on the study of the failure modes of these piezoresistive nanowires gauges i.e. the identification of physical phenomena and the development of failure models. In order to do this study, a first preliminary work will be focused on the physical mechanisms which manage the electrical conduction in the nanowires: piezoresistivity, charge trapping, relaxation field effect ... The work will then continue by the study of the failure modes of nanowires, the goal will be to understand and model the physical aging of these nanowires: it will be possible to rely on the knowledge of the physics of nanowires conduction but also play with the physical parameters of these nanowires such as silicon doping, the process fabrication, the packaging technique, the thermomechanical stresses, the scale effect due to surface / volume ratio, or the surface condition. Finally, models of aging will allow proposing and validating technological choices to ensure the nanowires lifetime depending on operating conditions of the sensors.


Département Composants Silicium (LETI)
Service Caractérisation, Conception et Simulation
Laboratoire Caractérisation Electrique et Fiabilité
Top envelopegraduation-hatlicensebookuserusersmap-markercalendar-fullbubblecrossmenuarrow-down