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Thesis
Home / Post Doctorat / Developement of relaxed pseudo-substrate based on InGaN porosified by electrochemical anodisation
Developement of relaxed pseudo-substrate based on InGaN porosified by electrochemical anodisation
Condensed matter physics, chemistry & nanosciencesEmerging materials and processes for nanotechnologies and microelectronicsSolid state physics, surfaces and interfacesTechnological challenges
Abstract
As part of the Carnot PIRLE project starting in early 2021, we are looking for a candidate for a post-doctoral position of 24 months (12 months renewable) with a specialty in material science. The project consists in developing a relaxed pseudo-substrate based on III-N materials for µLEDs applications, especially for emission in red wavelength. The work will focus on developing an InGaN-based epitaxy MOCVD growth process, on an innovative substrate based on electrochemically anodized and relaxed materials. He (She) will have characterize both the level of relaxation of the re-epitaxied layer and its crystalline quality. These two points will promote the epitaxial regrowth of an effective red LED. The candidate will be part of the team, working on the PIRLE project, will be associated to the work on red LED growth and its optical and electro-optical characterizations.
Laboratory
Département des Plateformes Technologiques (LETI)
Service Matériaux et Technologie pour la Photonique (1)
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