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Home   /   Post Doctorat   /   Electrical Characterization of resistive memory devices

Electrical Characterization of resistive memory devices

Electronics and microelectronics - Optoelectronics Engineering sciences Instrumentation


The activity of the postdoc will be focused on electrical characterization and physical modeling of devices with integrated bistable oxides (ie NiO, HfO2): mainly he will address both the hardware & methodology to address the non-volatile memory performances (ie write/erase, data retention and endurance), and he will perform measurements on several devices featuring different bistable oxides (ie NiO, HfO2…). Note that particular attention will be devoted to pulsed measurements tailored for “non-polar” or “bipolar” devices. After having collected sufficient ensemble of data on memory performance, he will try to interpret them in the simplest form with possibly semi-analitycal models in order to catch the basics of physics relying behind the electrical data.


Département Composants Silicium (LETI)
Service des Composants pour le Calcul et la Connectivité
Laboratoire de Caractérisation et Test Electrique
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