About us
Espace utilisateur
INSTN offers more than 40 diplomas from operator level to post-graduate degree level. 30% of our students are international students.
Professionnal development
Professionnal development
Find a training course
INSTN delivers off-the-self or tailor-made training courses to support the operational excellence of your talents.
Human capital solutions
At INSTN, we are committed to providing our partners with the best human capital solutions to develop and deliver safe & sustainable projects.
Home   /   Post Doctorat   /   Electrical Study of Conductive Bridge Random access Memory (CBRAM)

Electrical Study of Conductive Bridge Random access Memory (CBRAM)

Electronics and microelectronics - Optoelectronics Engineering sciences


CBRAM memories are among the most promising technologies as alternative to Flash technologies which face strong problems of scaling. CBRAM have a capacitor-like stack, where a chalcogenide material is sandwiched between a silver anode and an inert cathode. Biasing the cell, silver ions diffuse in the chalcogenide matrix and reach the cathode where they reduce. A conductive bridge is formed between the electrodes causing a drop of resistance. Reversing the bias yields to a back-migration of silver, interrupting the conductive bridge. This kind of device can be operated at very low voltage (below 1 V) and can lead to extremely low power consumption.
The main objective of this postdoc position will be the electrical characterization aiming to a better comprehension of the physics involved in the device, with the final goal of a strong improvement in device characteristics, in particular concerning data retention. For this aim, in-depth characterization on particular features (i.e. conduction mode, failure mechanisms) will be performed, as much as possible linked to a first level of physical modelling linking current conduction and diffused ions in the matrix. The candidate will address both hardware & methodology issues, and particular attention will be devoted to pulsed measurements. Various process, geometries and architectures will be studied. A strong interaction with the specialists of materials characterizations (nano-characterization platform) will be promoted for a better physical knowledge of the structures.


Département Composants Silicium (LETI)
Service des Composants pour le Calcul et la Connectivité
Laboratoire de Caractérisation et Test Electrique
Top envelopegraduation-hatlicensebookuserusersmap-markercalendar-fullbubblecrossmenuarrow-down