In this postdoc, we propose to investigate Resistive memories (RRAM) as a Storage Class Memory (SCM) for high density memory applications. To this aim, both CBRAM and OXRAM will be studied and compared. RRAM technologies, integrating various resistive layers, top and bottom electrodes will be integrated.
Then electrical characterization will be performed on these different memory options. The impact of the integration flow on the memory characteristics will be addressed, to evaluate how critical integration steps may impact the memory operation. In particular, MESA (the RRAM stack is etched) vs Damascene (the RRAM stack is deposited in a cavity) approaches will be compared.
After the evaluation of the memory basic operation (forming, SET and RESET operation speed, required voltages…), a specific focus will be made on reliability. In particular, endurance will be deeply investigated and optimized. The impact of SET RESET conditions (including smart programming schemes) on the window margin and number of cycles will be analyzed. Finally, the variability issue will be highly covered, in order to quantify how cycle to cycle and device to device variability close the window margin of the RRAM. Specific reliability concerns (read noise…) will also be addressed. Extrapolations on the maximum density a given RRAM technology can reach will be drawn.
Based on this detailed study, a benchmark of all the tested RRAM technologies will be made, to identify the pros and cons of each option, and highlight the tradeoff that have to be found (among them: memory speed, endurance, operating voltages, consumption…).