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Home   /   Post Doctorat   /   Modeling silicon and germanium spin qubits

Modeling silicon and germanium spin qubits


Silicon/Germanium spin qubits have attracted increasing attention and have made outstanding progress in the past two years. In these devices, the elementary information is stored as a coherent superposition of the spin states of an electron in a Si/SiGe heterostructure, or of a hole in a Ge/SiGe heterostructure. These spins can be manipulated electrically owing to the intrinsic (or to a synthetic) spin-orbit coupling, and get entangled through exchange interactions, allowing for the implementation of a variety of one- and two-qubit gates required for quantum computing and simulation. The aims of this postdoctoral position are to strengthen our understanding and support the development of electron and hole spin qubits based on Si/Ge heterostructures through analytical modeling as well as advanced numerical simulation. Topics of interests include spin manipulation & readout, exchange interactions in 1D and 2D arrays, coherence and interactions with other quasiparticles such as photons. The selected candidate will join a lively project bringing together > 50 people with comprehensive expertise covering the design, fabrication, characterization and modeling of spin qubits. He/She is expected to start early 2023, for up to three years.


Institut de Recherche Interdisciplinaire de Grenoble
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