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Home   /   Post Doctorat   /   Reliability of the copper (Cu) direct bonding interconnects for 3D integration

Reliability of the copper (Cu) direct bonding interconnects for 3D integration

Electronics and microelectronics - Optoelectronics Engineering sciences


Copper direct bonding is one of the most promising approaches for 3-D integration. The process is mature as shown in the literrature for wafer to wafer (W2W) approach [1-3] but also in the case of a die to wafer one (D2W). However, its reliability is yet to be demonstrated even if the initial results from the PhD thesis of R. Taibi seem to be promising [4].
The purpose of this post-doc position will be first, to consolidate the results obtained by R. Taibi with the W2W approach and secondly, to study the reliability of the D2W approach from the electromigration and stress-induced voiding point of view.
The candidate will be responsible for all the reliability study, starting with the tests and the results’ analysis, failure analysis (optical, IR, SEM, FIB...), the determination of the degradation’s mechanisms.

1. Gueguen, P., et al. Copper direct bonding for 3D integration. in Interconnect Technology Conference, 2008. IITC 2008. International. 2008.
2. Taibi, R., et al. Full characterization of Cu/Cu direct bonding for 3D integration. in Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th. 2010.
3. Di Cioccio, L., et al., An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization. Journal of The Electrochemical Society, 2011. 158(6): p. 81-86.
4. Taibi, R., et al., Investigation of Stress Induced Voiding and Electromigration Phenomena on Direct Copper Bonding Interconnects for 3D Integration, in 2011 IEEE International Electron Devices Meeting (IEDM). 2011: Washington, DC.


Département Composants Silicium (LETI)
Service Caractérisation, Conception et Simulation
Laboratoire Caractérisation Electrique et Fiabilité
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