In order to realize high capacity integrated capacitor, one approach consists in developing electrode with high specific surface. In this work, we propose to perform capacitor integrating silicon nanowires. The first part of this study will be devoted to the understanding and to the optimization of Si nanowires CVD growth process. In parallel, properties of nanowires obtained by electrochemical silicon etching will be assessed and will be compared to CVD nanowires characteristics. According to the electrical performances, different strategies (metallization Silicuration…) will be envisaged in order to enhance their electrical conductivity.