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Home   /   Post Doctorat   /   Simulation and electrical characterization of an innovative logic/memory CUBE for In-Memory-Computing

Simulation and electrical characterization of an innovative logic/memory CUBE for In-Memory-Computing

Electronics and microelectronics - Optoelectronics Engineering sciences New computing paradigms, circuits and technologies, incl. quantum Technological challenges


For integrated circuits to be able to leverage the future “data deluge” coming from the cloud and cyber-physical systems, the historical scaling of Complementary-Metal-Oxide-Semiconductor (CMOS) devices is no longer the corner stone. At system-level, computing performance is now strongly power-limited and the main part of this power budget is consumed by data transfers between logic and memory circuit blocks in widespread Von-Neumann design architectures. An emerging computing paradigm solution overcoming this “memory wall” consists in processing the information in-situ, owing to In-Memory-Computing (IMC).
However, today’s existing memory technologies are ineffective to In-Memory compute billions of data items. Things will change with the emergence of three key enabling technologies, under development at CEA-LETI: non-volatile resistive memory, new energy-efficient nanowire transistors and 3D-monolithic integration. At LETI, we will leverage the aforementioned emerging technologies towards a functionality-enhanced system with a tight entangling of logic and memory.
The post-doc will perform electrical characterizations of CMOS transistors and Resistive RAMs in order to calibrate models and run TCAD/spice simulations to drive the technology developments and enable the circuit designs.


Département Composants Silicium (LETI)
Service des Composants pour le Calcul et la Connectivité
Laboratoire Dispositifs Quantiques et Connectivité
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