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Thesis
Home   /   Thesis   /   III-V semiconductor nanoplatelets

III-V semiconductor nanoplatelets

Condensed matter physics, chemistry & nanosciences Emerging materials and processes for nanotechnologies and microelectronics Technological challenges Ultra-divided matter, Physical sciences for materials

Abstract

Colloidal semiconductor nanoplatelets (NPLs) are a class of two-dimensional nanostructures that have electronic and optical properties distinct from those of spherical quantum dots (QDs). They exhibit strong quantum confinement in a single dimension, their thickness, which can be controlled on the monolayer level using solution chemistry. As a result, NPLs emit light with an extremely narrow spectral width and at the same time, they have a very high absorption coefficients. These properties make them ideal candidates for various applications (e.g., light-emitting diodes for low-power-consumption displays, photocatalysis, single-photon emitters).
At present, only the synthesis of metal chalcogenide NPLs has been mastered. These materials either contain toxic elements (CdSe, HgTe, etc.) or have a large bandgap (ZnS, ZnSe). For these reasons, the development of synthesis methods for III-V semiconductor NPLs, such as InP, InAs and InSb is currently a major challenge. In this thesis, we will develop new synthetic approaches for the growth of InP NPLs, exploring different avenues and using in situ characterizations as well as machine learning assisted design of experiments. Numerical simulations will be used to determine the reactivity of precursors and to model the mechanisms inducing anisotropic growth.

Laboratory

Institut de Recherche Interdisciplinaire de Grenoble
DIESE
Université Grenoble Alpes
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